Intrinsic temperature(Ti) is defined as the temperature at which the intrinsic concentration ni equals the doping concentration N. Calculate the value of Ti for Si with doping concentration ND = 10^15 cm−3 and assuming Nc and Nv to be independent of temperature. [Given EG,Si = 1.12 eV, Nc=2.8 × 10^19 cm−3, and Nv=10^19 cm−3. At 300 K kBT=0.026 eV.]. Enter answer without units.

10¹⁶ phosphorus atoms/cm3 are introduced in Si. Assuming complete ionization, E_G,Si = 1.12 eV, Nc=3.2 x 10¹⁹(T/300)^1.5 cm−3 and Nv=1.8 x 10¹⁹ (T/300)^1.5 cm−3, k_BT=0.026 eV (at 300 K) and ni = 10¹⁰ /cm3 (at 300 K), find out electron concentration in the conduction band at 600 K. If your answer in the format a * 10¹⁶ , enter only a without units upto four significant digits.

Intrinsic temperature (Ti) is defined as the temperature at which the intrinsic concentration ni equals the doping concentration N. Calculate the value of Ti for GaAs with doping concentration ND = 10^14 cm−3 and assuming Nc and Nv to be independent of temperature. [Given EG,GaAs = 1.43 eV, Nc=4.7 × 10^17 cm−3 and Nv=7 × 10^18 cm−3. At T=300 K kBT=0.026 eV.] Enter answer without units.

The

position of the Fermi level for a silicon sample is at E

at

300 K the position of electron quasi Fermi level (in eV) is at E

at

300 K the position of hole quasi Fermi level (in eV) is at E

A phosphorus doped (10¹⁶ atoms/cm³

)

Si sample has resistivity of

Consider a p-type silicon sample with E_f

= E