A phosphorus doped (10 15 atoms/cm 3 ) Si sample has resistivity of 𝝆 Ω-cm....
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A phosphorus doped (1015 atoms/cm3) Si sample has resistivity of 𝝆 Ω-cm. This sample is now doped with additional boron atoms to increase the resistivity of the doped sample to at least 5𝝆. Assume that due to this additional boron doping electron and hole mobilities are not changed and electron mobility is three times of the hole mobility throughout. The concentration of the additional boron atoms required is within the range from × 1015 atoms/cm3 to × 1015 atoms/cm3.
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