The position of the Fermi level for a silicon sample is at E f = Ei + 0.45 eV ...
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The position of the Fermi level for a silicon sample is at E = Ei + 0.45 eV at 300 K. The sample is uniformly illuminated, thereby generating an additional 10 per second. The minority carrier lifetime in this sample is 1 μs. Assume n for Si is 10 and kT = 26 meV at 300 K. For this illuminated sample,
at 300 K the position of electron quasi Fermi level (in eV) is at E = Ei +
at 300 K the position of hole quasi Fermi level (in eV) is at E = Ei +
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