In a doped p-type silicon the concentration of acceptor atoms is N_A = 1 E17 /cm³.

Given that the intrinsic carrier density in silicon is n_i = 1.7 E11 /cm³.

Calculate the concentration of the minority electrons in the p-type silicon n_p = [ ] /cm³ formed in the p-type silicon.

Remember that in moodle the scientific notation for example for 2 × 10² is written as 2 E2 in the answer space please observe this notation.

Also NOTE:  Only place the value of the answer in the answer space do not put the S.I Units in the answer space given.

Given that in a doped p-type silicon the concentration of acceptor atoms is N_A = 1 E17 /cm³ while the concentration of the minority electrons in the p-type silicon is 2.89 E5 /cm³.

Since in the doped p-type silicon the mobility of electrons is μ_n= 1100 cm² /V.s and the mobility of holes is μ_p = 370 cm² /V.s.

The charge of an electron is q = 1.6 E-19 Coulombs.

Using these values resolve the resistivity ρ = [ ] Ω.cm of the p-type silicon.

Remember that in moodle the scientific notation for example 2 × 10² is written as 2 E2 in the answer space please observe this notation.

Also NOTE:  Only place the value of the answer in the answer space do not put the S.I Units in the answer space given.

Given that the intrinsic carrier density for intrinsic silicon is n_i  = 1.7 E11 /cm³ and for intrinsic silicon the mobility of electrons is μ_n = 1330 cm² /V.s while the mobility of holes is μ_p = 450 cm² /V.s.

The charge of an electron is q = 1.6 E-19 Coulombs.

Using these values Resolve the resistivity ρ = [ ] Ω.cm of the intrinsic silicon.

Remember that in moodle the scientific notation for example 2 × 10² is written as 2 E2 in the answer space please observe this notation.

Also NOTE:  Only place the value of the answer in the answer space do not put the S.I Units in the answer space given.